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2024 03 v.23 264-270+306
高硅无取向电工钢的高温氧化行为
基金项目(Foundation): 河北省省级科技计划资助项目(20311005D)
邮箱(Email):
DOI: 10.14186/j.cnki.1671-6620.2024.03.009
中文作者单位:

首钢智新电磁材料(迁安)股份有限公司;

摘要(Abstract):

采用对比实验研究了不同温度下的高硅无取向电工钢的氧化行为,利用场发射扫描电子显微镜及其EDS功能观察了经不同温度(1 030~1 240℃)加热后高硅无取向电工钢氧化层的微观形貌、结构组成及合金元素的偏析现象.结果表明:经高温加热后的高硅无取向电工钢氧化层主要包括4部分,分别为纯氧化铁层、铁橄榄石和氧化铁混合层、富Si区与贫Si区混合层、致密氧化膜层;高温氧化过程中会产生Si成分偏析现象,1 240℃时Si的偏析深度可达130μm,不同深度偏析处的Si质量分数相差可达0.9%,且随着温度的降低,偏析程度逐渐减弱,直至消失.

关键词(KeyWords): 高硅无取向电工钢;氧化层;Si偏析;铁橄榄石;致密氧化膜
参考文献

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基本信息:

DOI:10.14186/j.cnki.1671-6620.2024.03.009

中图分类号:TG142.1

引用信息:

[1]刘云霞,刘晓强,程林等.高硅无取向电工钢的高温氧化行为[J].材料与冶金学报,2024,23(03):264-270+306.DOI:10.14186/j.cnki.1671-6620.2024.03.009.

基金信息:

河北省省级科技计划资助项目(20311005D)

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